Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

文件：100.46 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

文件：100.46 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

文件：49.87 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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