GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

文件：59.71 Kbytes 页数：5 Pages

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

文件：59.71 Kbytes 页数：5 Pages

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

文件：59.71 Kbytes 页数：5 Pages

SONYSony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description\nThe 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. • Low voltage operation\n• Low noise: NF = 1.2dB (typ.) at 800MHz\n• High gain: Ga = 20dB (typ) at 800MHz\n• High stabilityApplication\nUHF band amplifier, mixer and oscillator;

Sony

索尼

GaAs N-channel Dual Gate MES FET

Sony

索尼