RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for uses as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Small Package : 4 Pins Sup

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NEC

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丝印：U1G；MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for uses as RF

文件：259.829 Kbytes 页数：10 Pages

RENESAS

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