3SK253

Marking：U1G；MOS FIELD EFFECT TRANSISTOR

RFAMPLIFIERFORUHFTUNER N-CHANNELSiDUALGATEMOSFIELD-EFFECTTRANSISTOR 4PINSMINIMOLD FEATURES •LowVDDUse:(VDS=3.5V) •DrivingBattery •LowNoiseFigure:NF=1.8dBTYP.(f=900MHz) •HighPowerGain:GPS=18.0dBTYP.(f=900MHz) •SuitableforuseasRFamplif

3SK255

Marking：U1G；MOS FIELD EFFECT TRANSISTOR

RFAMPLIFIERFORUHFTUNER N-CHANNELSiDUALGATEMOSFIELD-EFFECTTRANSISTOR 4PINSSUPERMINIMOLD FEATURES •LowVDDUse:(VDS=3.5V) •DrivingBattery •LowNoiseFigure:NF=1.8dBTYP.(f=900MHz) •HighPowerGain:GPS=18.0dBTYP.(f=900MHz) •SuitableforusesasRF

MURS140T3G

Marking：U1G；Package：SMB；Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V

Features •SmallCompactSurfaceMountablePackagewithJ−BendLeads •RectangularPackageforAutomatedHandling •HighTemperatureGlassPassivatedJunction •LowForwardVoltageDrop(0.71to1.05VMax@1.0A,TJ=150°C) •NRVUSandSURS8PrefixesforAutomotiveandOtherApplications

SURS8140T3G

Marking：U1G；Package：SMB；Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V

Features •SmallCompactSurfaceMountablePackagewithJ−BendLeads •RectangularPackageforAutomatedHandling •HighTemperatureGlassPassivatedJunction •LowForwardVoltageDrop(0.71to1.05VMax@1.0A,TJ=150°C) •NRVUSandSURS8PrefixesforAutomotiveandOtherApplications

U1G

Marking：U1G；Package：SOD-123FL；Surface Mount Ultra Fast Recovery Rectifier Diodes

Features Lowprofilepackage Idealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability SuperFastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

US1GL

Marking：U1G；Package：SOD-123FL；SURFACE MOUNT HIGH EFFICIENCY RECTIFIER

Features Glasspassivateddevice Idealforsurfacemoutedapplications Metallurgicallybondedconstruction Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadlength, 5lbs.(2.3kg)tension Lowreverseleakage

DHE1G

Marking：U1G；Surface Mount Ultra Fast Rectifiers

US1GW

Marking：U1G；Package：SOD123FL；Surface Mount Ultrafast Recovery Rectifier

U1GF

Marking：U1GF；Package：SMAF；Surface Mount Super Fast Recovery Rectifier Diodes

Features Lowprofilepackage Idealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability SuperFastreverserecoverytime MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak

US1GBF

Marking：U1GB；Surface Mount Ultra Fast Rectifiers

FEATURES •Forsurfacemountedapplications •Lowprofilepackage •GlassPassivatedChipJunction •Superfastreverserecoverytime •LeadfreeincomplywithEURoHS2011/65/EUdirectives