丝印：3E；Package：SOT-523；PNP Transistor

■ Features ● Epitaxial Planar Die Construction ● Also Available in Lead Free Version ● Complementary to MMBT3904T

文件：711.63 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：3E；Package：TO-236AB；30 V; 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small SMD plastic package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC

文件：319.79 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：3E；Package：SOT457；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • Electr

文件：279.46 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：3E；Package：SOT-323；Schottky barrier diode

Features High reliability Small mold type Low capacitance Application High speed switching

文件：199.08 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：3E；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications  General regulation functions  Non-repetitive peak reverse power dissipation:  180 W  Low differen

文件：995.99 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：3E；Package：SOT-89；PNP Transistor

文件：398.42 Kbytes 页数：4 Pages

PJSEMI

平晶半导体

丝印：3E；Package：SOT-23；PNP Silicon Epitaxial General Purpose Transistors

文件：1.77421 Mbytes 页数：12 Pages

FUTUREWAFER

丝印：3E；Package：SOT-23；PNP Plastic-Encapsulate Transistors

文件：1.37311 Mbytes 页数：5 Pages

JINGHENG

晶恒

丝印：3E；Package：SOT-23；PNP General Purpose Amplifier

文件：254.52 Kbytes 页数：4 Pages

ARTSCHIP

丝印：3E；Package：SOT-23；Ideally suited for automatic insertion

文件：518.909 Kbytes 页数：6 Pages

RECTRON

丽正