30 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alte

文件：54.87 Kbytes 页数：7 Pages

PHI

飞利浦

丝印：3E；Package：TO-236AB；30 V; 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small SMD plastic package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC

文件：319.79 Kbytes 页数：12 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

30 V; 1 A PNP low VCEsat (BISS) transistor

文件：203.97 Kbytes 页数：11 Pages

PHI

飞利浦

30 V; 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. • Small SMD plastic package\n• High collector current capability: IC and ICM\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 1A TO236AB

Nexperia USA Inc.