丝印：3D34C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 3.3 m, 157 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant

文件：195.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：3D3N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 3.0 m, 133 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.07 Kbytes 页数：7 Pages

ONSEMI

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丝印：3D3N06CL；Package：LFPAK4；Power MOSFET 60 V, 3.0 m, 133 A, Single N?묬hannel

文件：322.39 Kbytes 页数：7 Pages

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