丝印：3D3N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 3.0 m, 133 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：3D3N06CL；Package：LFPAK4；Power MOSFET 60 V, 3.0 m, 133 A, Single N?묬hannel

文件：322.39 Kbytes 页数：7 Pages

ONSEMI

安森美半导体