MM3Z51

Marking：3C；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

NX6008NBKW

Marking：3C；Package：SOT323；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtechnology •Ele

PBSS4130T

Marking：3C；Package：SOT23；30 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES ·Lowcollector-emittersaturationvoltageVCEsat ·HighcollectorcurrentcapabilityICandICM ·Highefficiencyleadingtolessheatgeneration ·Reducedprinted-circuitboardrequirements ·CosteffectivealternativetoMOSFETsinspecific applications. APPLICATIONS ·Power

PMV240ENEA

Marking：3C；Package：SOT23；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •ExtendedtemperaturerangeTj=175°C •TrenchMOSFETtechnology

RB451UMFH

Marking：3C；Package：SOT-323FL；Schottky Barrier Diode

Application Smallcurrentrectification Features 1)Ultrasmallmoldtype (UMD3F) 2)Highreliability 3)SuperlowVF

SD033MC

Marking：3C；Package：SOD-323；Single Line TVS Diode for ESD

FEATURES ®350Wattspeakpulsepower(1p=8/201s) ®ProtectsoneIOorpowerline ®Lowclampingvoliage ®Workingvoltage:3.3V,5V.8V.12V,15V.24V,36V ®Lowleakagecurrent @Solid-statesiliconavalanchetechnology APPLICATIONS ®CellPhoneHandsetsandAccessories ®Microprocessorbased

SD36MC

Marking：3C；Package：SOD-323；Single Line TVS Diode for ESD

FEATURES ®350Wattspeakpulsepower(1p=8/201s) ®ProtectsoneIOorpowerline ®Lowclampingvoliage ®Workingvoltage:3V,5V,8V,12V,15V,24V,36V ®Lowleakagecurrent @Solid-statesiliconavalanchetechnology APPLICATIONS ®CellPhoneHandsetsandAccessories ®Microprocessorbased

SP4020-01FTG-C

Marking：3C；Package：SOD323；SP4020 Series 2.5pF, 30A Discrete TVS Diode

Description TheSP4020componentsintegratelowcapacitance steeringdiodeswithoneortwoavalanchebreakdown diodesforunidirectionalorbidirectionalprotection, respectively,toprotectagainstESDandlightninginduced surgeevents.Thesedevicescansafelyabsorbupto 30AperIEC61

TDZ3V0J

Marking：3C；Package：SOD323F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits 1.3Applications Generalregulationfunctions Non-repetitivepeakreversepower dissipation:180W Lowdifferen

TUSD03FBXL

Marking：3C；Package：SOD323；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features| «Lowoperatingvoltage:3.3V Ultralowcapacitance:0.4pF(Typ) «Ultralowleakage:nAlevel| «Lowclampingvoltage «~IEC61000-4-2(ESD)immunitytest| Airdischarge:+30kV Contactdischarge:+30kV —~IEC61000-4-4(EFT)40A(5/50ns) —~IEC61000-4-5(Lightning)8A(8/20pss)