丝印：3C2；Package：SMA；Surface Mount Zener Diodes

文件：379.93 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：3C2；Package：DO214AA；Surface Mount Silicon Zener Diodes

文件：648.26 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：3C20；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C22；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C24；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C26；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C28；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C225L；Package：SOT669；N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

文件：468.38 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：3C230L；Package：SOT669；N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

文件：933.01 Kbytes 页数：15 Pages

NEXPERIA

安世

TYPES 1C - 9C Ceramic Capacitors

FEATURES ElIA characteristics COG, X7R, Z5U Capacitance range 10pF to 4.7HF Voltage ratings 50 WVDC to 100 WVDC Wide choice of lead spacing

文件：483.08 Kbytes 页数：4 Pages

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