零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking:3C7;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
Marking:3C7;Package:DO-214AC;Surface Mount Zener Diodes | ANOVAAnova Technologies CO., LTD. 林朋科技林朋科技股份有限公司 | ANOVA | ||
Marking:3C7;Package:DO214AA;Surface Mount Silicon Zener Diodes | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Marking:3C7V;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
Marking:3C70;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
Marking:3C75;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
Marking:3C725L;Package:SOT669;N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology 1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking:3C730L;Package:SOT669;N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology 1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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