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10SMBT7.0CA

Marking:3C7;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

SMA3EZ56D5

Marking:3C7;Package:DO-214AC;Surface Mount Zener Diodes

ANOVAAnova Technologies CO., LTD.

林朋科技林朋科技股份有限公司

SMB3Z62A

Marking:3C7;Package:DO214AA;Surface Mount Silicon Zener Diodes

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

10SMBT7.5CA

Marking:3C7V;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

10SMBT70CA

Marking:3C70;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

10SMBT75CA

Marking:3C75;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip. 1000Wpeakpulsepowercapabilitywitha10/1000uswaveform. Repetitiverate(dutycycle):0.01%. VeryFastresponsetime:typicallylessthan1.0psfrom0VtoVBRmin Excellentclampingcapability. Forsurfacemountedapplicationsinordertooptimi

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

PSMN3R7-25YLC

Marking:3C725L;Package:SOT669;N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSMN3R7-30YLC

Marking:3C730L;Package:SOT669;N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology

1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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