丝印：3C1；Package：SMA；Surface Mount Zener Diodes

文件：379.93 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：3C1；Package：DO214AA；Surface Mount Silicon Zener Diodes

文件：648.26 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：3C10；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C11；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C12；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C13；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C14；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C15；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C16；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3C17；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体