Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene

文件：1.04479 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60N；Package：D2PAK；Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene

文件：1.04479 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60N；Package：TO-247；N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications – Automotive Description This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new ve

文件：869.77 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa

文件：1.36347 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60ND；Package：TO-247；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa

文件：1.36347 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体