-4.1A竊?30V P-CHANNEL MOSFET

文件：114.66 Kbytes 页数：5 Pages

KIA

可易亚半导体

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes 页数：1 Pages

HEYCO

丝印：3407；Package：SOT-23；P-Channel 20-V(D-S) MOSFET

Product Summary VDs= -30V, ID= -4.1A RDS(ON)

文件：1.89348 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：3407；Package：SOT-23；Plastic-Encapsulate MOSFETS

General Description The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：183.53 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：3407；Package：SOT-23；Plastic-Encapsulate MOSFETS

General Description -CAR for automotive and other applications requiring unique site and AEC-Q101 qualified and PPAP capable. The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：244.91 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：3407；Package：SOT-23；P-Channel Super Enhancement Mode MOSFET

General Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management

文件：1.6335 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3407；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET

Features ⚫ High power and current handing capability ⚫ VDS= -30V,ID= -4.1A RDS(on)

文件：1.23992 Mbytes 页数：5 Pages

HUIXIN

慧芯电子

丝印：3407；Package：SOT-23；P-Channel Super Enhancement Mode MOSFET

General Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management

文件：1.6335 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3407；Package：SOT-23；P-Channel Enhancement Mode MOSFET

Features  RDS(ON) ≤ 52mΩ@ VGS = -10V  RDS(ON) ≤ 87mΩ@ VGS = -4.5V  High-speed Switching  Drive Circuits Can be Simple  Parallel Use is Easy  Halogen free  Qualified to AEC-Q101 standards for high reliability Typical Applications  Power Management in Note Book  Switching Applicat

文件：1.70809 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

丝印：3407；Package：SOT-23-3L；P-Channel Enhancement Mode MOSFET

Features  RDS(ON) ≤ 52mΩ@ VGS = -10V  RDS(ON) ≤ 87mΩ@ VGS = -4.5V  High-speed Switching  Drive Circuits Can be Simple  Parallel Use is Easy  Halogen free  Qualified to AEC-Q101 standards for high reliability Typical Applications  Power Management in Note Book  Switching Applicat

文件：1.70809 Mbytes 页数：5 Pages

LUGUANG

鲁光电子