NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

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UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：150.43 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003BS is suitable for electronic ballast power switch circuit and the compact el • High collector-base breakdown voltage \n• Low reverse leakage current \n• High reliability;

UTC

友顺

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

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PERKINELMER

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

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MOTOROLA

摩托罗拉

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. FEATURES AND BENEFITS ■ COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ■ UL

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STMICROELECTRONICS

意法半导体