MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

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Motorola

摩托罗拉

MICROWAVE POWER TRANSISTORS

恩XP

P-Channel Power MOSFET

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ONSEMI

安森美半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. FEATURES: • PG = 6.0 dB min. at 3 W / 3,000 MHz • Difused Ballast Resistor • Omnigold™ Metalization System

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ASI

THREE PHASE BRIDGE MOSFET POWER MODULE

DESCRIPTION: The MSK3003 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. Consisting of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors, the MSK3003 will interface directly with most brushless mo

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MSK