SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 21 mΩ MAX

文件：164.92 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L

文件：327.46 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Low on-state resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A) ● Low Ciss: Ciss = 570 pF TYP. ● Built-in gate protection diode

文件：52.39 Kbytes 页数：2 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L

文件：327.46 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 21 mΩ MAX

文件：164.92 Kbytes 页数：8 Pages

NEC

瑞萨