N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS= −40 V • High input impedance: IGSS= −1.0 nA (max) (VGS= −30 V) • Low RDS (ON): RDS (ON)= 20 Ω(typ.) (IDSS= 15 mA)

文件：226.65 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

文件：693.75 Kbytes 页数：5 Pages

TOSHIBA

东芝

N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

Toshiba

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate volta

文件：249.66 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 VRDS(on) = 0.60 Ω

文件：167.27 Kbytes 页数：8 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features • High voltage: VDSS = 200 V • Gate voltage rating: 30 V RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 3.0 A) • Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode

文件：46.03 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features | + Vos=200v © os 60A + Reson $0650 @Ves=10V

文件：993.38 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.91 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：398.77 Kbytes 页数：2 Pages

ISC

无锡固电