Silicon N-channel Power MOSFET

Features ● Avalanche energy capacity guaranteed: EAS 20 mJ ● Gate-source surrender voltage VGSS = 30 V guaranteed ● High-speed switching: tf = 50 ns ● No secondary breakdown

文件：41.79 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon N-channel Power MOSFET

Features ● Low on-resistance, low Qg ● High avalanche resistance

文件：41.71 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon N-channel power MOSFET

Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features • Low on-resistance, low Qg • High avalanche resistance

文件：64.099 Kbytes 页数：3 Pages

PANASONIC

松下

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L

文件：312.95 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-channel Enhancement Mode Power MOSFET

Features VDS= 20V, ID= 100A RDS(ON)

文件：918.27 Kbytes 页数：4 Pages

BYCHIP

百域芯

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 1100 pF TYP. Built-in gate protection diode

文件：46.74 Kbytes 页数：1 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1

文件：149.87 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L

文件：312.95 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1

文件：149.87 Kbytes 页数：7 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

文件：148.99 Kbytes 页数：7 Pages

NEC

瑞萨