MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. • Low on-sta

文件：311.68 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) ● Low Ciss: Ciss = 2400 pF TYP.

文件：46.35 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. • Low on-sta

文件：311.68 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

文件：148.99 Kbytes 页数：7 Pages

NEC

瑞萨

Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

文件：693.75 Kbytes 页数：5 Pages

TOSHIBA

东芝

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文件：221.31 Kbytes 页数：6 Pages

TOSHIBA

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Silicon N-Channel MOS Type Switching Regulator Applications

文件：239.38 Kbytes 页数：6 Pages

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iscN-Channel MOSFET Transistor

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ISC

无锡固电

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文件：221.31 Kbytes 页数：6 Pages

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N-Channel 200 V (D-S) MOSFET

文件：963.16 Kbytes 页数：6 Pages

VBSEMI

微碧半导体