MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

文件：34.94 Kbytes 页数：1 Pages

Sanken

三垦

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：314.21 Kbytes 页数：2 Pages

ISC

无锡固电

Switching (250V, 16A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：143.78 Kbytes 页数：4 Pages

ROHM

罗姆

Switching (450V, 5A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel.

文件：153.7 Kbytes 页数：5 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.71 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOSFET

Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.

文件：43.33 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：TL；Package：CPT3；Switching (500V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：138.71 Kbytes 页数：4 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS=900V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.72 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

文件：288.77 Kbytes 页数：5 Pages

TOSHIBA

东芝