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2SK222

High-Frequency, Low-Noise Amp Applications????????????

Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Large |yfs| · Low gate leakage current.

文件:74.11 Kbytes 页数:3 Pages

SANYO

三洋

2SK222

N-Channel Junction Silicon FET Low-Frequency, Low Noise Amplifier Applications

ONSEMI

安森美半导体

2SK2220

Silicon N-Channel MOS FET

Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement–mode • Good complementary characteristics • Equipp

文件:39.84 Kbytes 页数:7 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK2220

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件:72.02 Kbytes 页数:6 Pages

RENESAS

瑞萨

2SK2220-E

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件:72.02 Kbytes 页数:6 Pages

RENESAS

瑞萨

2SK2221

Silicon N-Channel MOS FET

Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement–mode • Good complementary characteristics • Equipp

文件:39.84 Kbytes 页数:7 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SK2221

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件:72.02 Kbytes 页数:6 Pages

RENESAS

瑞萨

2SK2221

Old Company Name in Catalogs and Other Documents

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件:91.11 Kbytes 页数:8 Pages

RENESAS

瑞萨

2SK2221-E

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件:72.02 Kbytes 页数:6 Pages

RENESAS

瑞萨

2SK2223-01R

N-channel MOS-FET

FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Pow

文件:174.31 Kbytes 页数:2 Pages

FUJI

富士通

技术参数

  • Vgs (off) (V) max.:

    1.45

  • Nch/Pch:

    Nch

  • VGSS (V):

    20

  • Number of Channels:

    Single

  • Pch (W):

    100

  • Configuration [Device]:

    Built-In SBD

  • Application:

    Automotive Use

  • VDSS (V) max.:

    180

  • Mounting Type:

    Through Hole

  • ID (A):

    8

  • Package Type:

    TO-3P

  • Ciss (pF) typ.:

    600

  • Production Status:

    Non-promotion

供应商型号品牌批号封装库存备注价格
KEC
24+
TO-92
400
询价
SANYO
24+
TO-92
6300
只做原装正品现货 欢迎来电查询15919825718
询价
日立
23+
3P
1800
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
RENESAS
23+
场效应管TO-3P
1000
进口原装现货库存,特价,只售原装正品
询价
瑞萨
1215+
TO-247
150000
全新原装,绝对正品,公司大量现货供应.
询价
Renesas
17+
TO-3P
6200
询价
FUJI
2016+
TO-3PF
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
RENESAS
24+/25+
TO-3P
7200
原装正品现货库存价优
询价
HIT
16+
TO220
449
全新原装现货
询价
RENESAS
25+
TO-247
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多2SK222供应商 更新时间2026-4-17 16:30:00