Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：34.9 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.3 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：82.79 Kbytes 页数：7 Pages

RENESAS

瑞萨

500V - 30A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard

文件：248.89 Kbytes 页数：8 Pages

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瑞萨

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：39.83 Kbytes 页数：2 Pages

NEC

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N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR

DESCRIPTION FEATURES The 2SK163 is designed for use in the first stage for AF Low Noise amplifier. • Low Equivalent Noise Voltage. en=1.3 nV/HZ TYP. (VDs =10 V, Ip =1.0 mA, f=1.0 kHz) • High Voltage and High Ysl VDSX>50 V (VGS =-2.0 V) INfs>7.0 mS (VDs = 10 V, ID = 1.0 mA, f= 1.0 kHz)

文件：61.31 Kbytes 页数：2 Pages

NEC

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：48.91 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：48.91 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.81 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.81 Kbytes 页数：8 Pages

RENESAS

瑞萨