Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.91 Kbytes 页数：8 Pages

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瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.03 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.27 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.91 Kbytes 页数：8 Pages

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MOS FIELD F! FECT TRANSISTOR

N-CHANNEL MOS FET FOR SWITCHING

文件：562.96 Kbytes 页数：9 Pages

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N-CHANNEL MOS FET FOR SWITCHING

文件：1.94724 Mbytes 页数：6 Pages

NEC

瑞萨

N-CHANNEL MOS FET FOR SWITCHING

N-CHANNEL MOS FET FOR SWITCHING

文件：359.31 Kbytes 页数：6 Pages

NEC

瑞萨

丝印：G19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for filter circuit. FEATURES • Directly driven by ICs having a 3 V power supply. • Has low G

文件：617.95 Kbytes 页数：7 Pages

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MOS Field Effect Transistor

Features ● Directly driven by Ics having a 3V power supply. ● Has low gate leakage current IGSS= 5nA MAX.@VGS= 3.0V

文件：43.42 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：G20；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit. FEATURES • Directly driven by ICs having a 3 V powe

文件：915.97 Kbytes 页数：7 Pages

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