Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • Low voltage drive device - Can be driven from 4 V • Suitable for motor drive, solenoid drive , DC-DC converter and etc. Application High speed power switching

文件：46.87 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC – DC converter Application High speed power switching

文件：47 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC – DC converter Application High speed power switching

文件：80.95 Kbytes 页数：7 Pages

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瑞萨

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Fast Switching Speed APPLICATIONS • low on–resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC–DC convertor

文件：64.069 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC – DC converter Application High speed power switching

文件：80.95 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC – DC converter Application High speed power switching

文件：81.24 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC – DC converter Application High speed power switching

文件：33.61 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.4 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC – DC converter Application High speed power switching

文件：81.24 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 90 ns) • Suitable for motor control, switching regulator and DC-DC converter Application High speed power switching

文件：82.55 Kbytes 页数：7 Pages

RENESAS

瑞萨