Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：49.68 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：108.65 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.7 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：292 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET •  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No secondary breakdown\n•  Suitable for switching regulator and DC-DC converterApplication\nHigh speed power switching;

HITACHI

日立

Transistors>Switching/MOSFETs

Renesas

瑞萨

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：49.68 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：108.65 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：108.65 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

文件：108.65 Kbytes 页数：9 Pages

RENESAS

瑞萨