MOS Field Effect Transistor

Features ● Can be driven by a 3.0-V power source ● Not necessary to consider driving current because of it is high input impedance ● Possible to reduce the number of parts by omitting the bias resistor ● Complments the 2SJ185

文件：45.17 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.00401 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

iscN-Channel MOSFET Transistor

文件：821.82 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：844.67 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：852 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：842.08 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：849.92 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：859.76 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：860.88 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：863.08 Kbytes 页数：2 Pages

ISC

无锡固电