Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

Relay Drive, Motor Drive and DC−DC Converter Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 33 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) ● Enhancement mode : Vth = 0.8 to 2.0 V (VDS

文件：444.15 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS)

Relay Drive, Motor Drive and DC−DC Converter Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 47 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) ● Enhancement mode : Vth = 0.8 to 2.0 V (VDS

文件：263.67 Kbytes 页数：5 Pages

TOSHIBA

东芝

N-CHANNEL ENHANCEMENT TYPE MOS-FET

[FUJI] N-CHANNEL ENHANCEMENT TYPE MOS-FET Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：171.01 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL ENHANCEMENT TYPE MOS-FET

[FUJI] N-CHANNEL ENHANCEMENT TYPE MOS-FET Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：171.01 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.24 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET?

Features ● High current ● Low on-resistance ● No secondary breakdown ● Low driving power ● High forward Transconductance Applications ● Motor controllers ● General purpose power amplifier ● DC-DC converters

文件：142.76 Kbytes 页数：4 Pages

Fuji

富士通

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：228.31 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.63 Kbytes 页数：2 Pages

ISC

无锡固电