Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

Relay Drive, Motor Drive and DC−DC Converter Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 33 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) ● Enhancement mode : Vth = 0.8 to 2.0 V (VDS

文件：444.15 Kbytes 页数：6 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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isc N-Channel MOSFET Transistor

文件：303.29 Kbytes 页数：2 Pages

ISC

无锡固电

Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

文件：452.7 Kbytes 页数：6 Pages

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Power MOSFET (N-ch single 60V VDSS 150V)

Polarity：N-ch\nGeneration：L²-π-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 50 A \nPower Dissipation PD 150 W \nDrain-Source voltage VDSS 100 V ;

Toshiba

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Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter

文件：452.7 Kbytes 页数：6 Pages

TOSHIBA

东芝