2SJ356

MOS Field Effect Transistors

Features •Lowon-stateresistance RDS(on)=0.95(VGS=-4V,ID=-1.0A) RDS(on)=0.50(VGS=-10V,ID=-1.0A)

2SJ356

丝印：PR；MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORHIGH-SPEEDSWITCHING The2SJ356isaP-channelMOSFETofaverticaltypeandis aswitchingelementthatcanbedirectlydrivenbytheoutputofan ICoperatingat5V. ThisproducthasalowONresistanceandsuperbswitching characteristicsandisidealfordriving

2SJ356

Power MOSFETs-Power MOSFETs for Automotive;

2SJ356

P-Channel 60-V (D-S) MOSFET

2SJ356

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

2SJ356

MOS Field Effect Transistors

2SJ356_15

P-Channel MOSFET

2SJ356C

P-CHANNEL MOSFET FOR SWITCHING