Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：45.87 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

文件：87.25 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon P-Channel MOSFET

Features Low on-state resistance RDS(on)=2.3 (VGS=-10V,ID=-2A) High speed switching

文件：47.09 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

文件：87.25 Kbytes 页数：8 Pages

RENESAS

瑞萨

P-Channel MOSFET

文件：1.2462 Mbytes 页数：4 Pages

KEXIN

科信电子