isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 100V(Min.) ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 5A APPLICATIONS ·Designed for 40~60W audio amplifier power output applications.

文件：221.32 Kbytes 页数：2 Pages

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isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 7A • Complement to Type 2SB612 APPLICATIONS • Designed for 80~100W audio amplifier power output applications.

文件：221.6 Kbytes 页数：2 Pages

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无锡固电

80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A

80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A

文件：69.58 Kbytes 页数：1 Pages

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80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A

80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A

文件：69.58 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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isc Silicon NPN Power Transistors

文件：256.7 Kbytes 页数：2 Pages

ISC

无锡固电

80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A

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