| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Power Amplifier Applications 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. 文件：94.99 Kbytes 页数：4 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
100V/120V, 1A Low-Frequency Power Amp Applications 1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity. 文件：106.11 Kbytes 页数：3 Pages | SANYO 三洋 | SANYO | ||
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications 文件：168.22 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications 文件：201.29 Kbytes 页数：4 Pages | ISC 无锡固电 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications 文件：156.6 Kbytes 页数：4 Pages | SAVANTIC | SAVANTIC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications 文件：156.6 Kbytes 页数：4 Pages | SAVANTIC | SAVANTIC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications 文件：201.29 Kbytes 页数：4 Pages | ISC 无锡固电 | ISC | ||
100V/120V, 1A Low-Frequency Power Amp Applications 1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity. 文件：106.11 Kbytes 页数：3 Pages | SANYO 三洋 | SANYO | ||
Power Amplifier Applications 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. 文件：94.99 Kbytes 页数：4 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat) 文件：208.72 Kbytes 页数：5 Pages | PANASONIC 松下 | PANASONIC |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
120V
- 最大电流允许值：
1A
- 最大工作频率：
130MHZ
- 引脚数：
3
- 可代换的型号：
2SC2690,2SC2690A,2SD1382,2SD1563,2SD1684,
- 最大耗散功率：
8W
- 放大倍数：
- 图片代号：
A-21
- vtest：
120
- htest：
130000000
- atest：
1
- wtest：
8
详细参数
- 型号：
2SD60
- 制造商：
SANYO
- 制造商全称：
Sanyo Semicon Device
- 功能描述：
100V/120V, 1A Low-Frequency Power Amp Applications
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAY |
16+ |
T0-126 |
10000 |
全新原装现货 |
询价 | ||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
24+ |
TO-126 |
6430 |
原装现货/欢迎来电咨询 |
询价 | |||
NEC |
23+ |
TO-126 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
2022+ |
TO-126 |
22428 |
原厂代理 终端免费提供样品 |
询价 | ||
NEC |
23+ |
TO-126 |
920001 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
SANYO/国产 |
07+ |
TO126 |
3091 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SANYO |
23+ |
TO-126 |
4000 |
正品原装货价格低 |
询价 | ||
SANYO/国产 |
23+ |
TO126 |
3091 |
全新原装正品现货,支持订货 |
询价 | ||
SANYO/国产 |
22+ |
TO126 |
20000 |
公司只有原装 品质保证 |
询价 |
