Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw

文件：43.44 Kbytes 页数：2 Pages

Panasonic

松下

Silicon NPN triple diffusion planer type Darlington(For power amplification)

For power amplification ■ Features • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat):

文件：45.78 Kbytes 页数：1 Pages

Panasonic

松下

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS

文件：142.27 Kbytes 页数：2 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION · Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A · High Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS · Designed for power amplifier applications

文件：58.72 Kbytes 页数：2 Pages

ISC

无锡固电

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING APPLICATIONS)

Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V) • Zener diode included between collector

文件：105.04 Kbytes 页数：2 Pages

TOSHIBA

东芝

丝印：DV；Package：SOT-89；Medium Power Transistor (25V, 1.2A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)

文件：75.5 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：DV；Package：SOT-89；MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

文件：61.7 Kbytes 页数：2 Pages

ROHM

罗姆

Medium Power Transistor

■ Features ● High DC current gain. ● High emitter-base voltage. ● Low saturation voltage.

文件：49.92 Kbytes 页数：1 Pages

KEXIN

科信电子

Medium Power Transistor (25V, 1.2A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)

文件：85.44 Kbytes 页数：3 Pages

ROHM

罗姆

Silicon NPN triple diffusion planer type Darlington(For power amplification)

Silicon NPN triple diffusion planer type Darlington For power amplification ■ Features • High forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw

文件：45.76 Kbytes 页数：1 Pages

Panasonic

松下