Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode.

文件：43.94 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output

文件：164.11 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output

文件：170.09 Kbytes 页数：4 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Color TV horizontal deflection output applications

文件：149.87 Kbytes 页数：3 Pages

ISC

无锡固电

Color TV Horizontal Deflection Output Applications

Features · High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

文件：43.72 Kbytes 页数：4 Pages

SANYO

三洋

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS

FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) • High DC Current Gain hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A)

文件：46.53 Kbytes 页数：8 Pages

NEC

瑞萨

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) · High DC Current Gain hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A)

文件：204.42 Kbytes 页数：10 Pages

RENESAS

瑞萨

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) · High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

文件：204.4 Kbytes 页数：10 Pages

RENESAS

瑞萨

AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

文件：46.51 Kbytes 页数：8 Pages

NEC

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current-IC= 5A • Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA • High DC Current Gain- : hFE= 150~600@ IC= 1A APPLICATIONS • Designed for audio frequency amplifier and switching applications.

文件：56.81 Kbytes 页数：2 Pages

ISC

无锡固电