Power Transistor (-50V, -3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963.

文件：61.48 Kbytes 页数：3 Pages

ROHM

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Power transistor (50V, 3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308.

文件：60.27 Kbytes 页数：3 Pages

ROHM

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Power Transistor

Features Low saturation voltage. Excellent DC current gain characteristics.

文件：50.12 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN epitaxial planar type(For power switching)

Silicon NPN epitaxial planar type For power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw.

文件：55.4 Kbytes 页数：3 Pages

Panasonic

松下

丝印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

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丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

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1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件：88.13 Kbytes 页数：2 Pages

ROHM

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丝印：T103；Package：TO-92L；TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes 页数：2 Pages

ROHM

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isc Silicon NPN Power Transistor

文件：253.38 Kbytes 页数：2 Pages

ISC

无锡固电

Low VCE(sat) Transistor

为支持现有客户而生产的产品。不对新设计出售此产品。 Low VCE(sat)晶体管;

ROHM

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