2SD1899-L

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti

2SD1899-Z

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat)

2SD1899-Z

iscSiliconNPNPowerTransistor

DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications

2SD1899-Z

SILICONPOWERTRANSISTOR

DESCRIPTION The2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFE:hFE=100to400 •LowVCE(sat):VCE(sat)≤0.25V

2SD1899-Z

NPNSiliconEpitaxialTransistor

Features ●LowVCE(sat). ●HighhFE.

2SD1899-Z

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SD1899-Z

TO-252Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SD1899-Z

NPNSILICONEPITAXIALTRANSISTORMP-3

DESCRIPTION 2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFEhFE=100to400 •LowVCE(sat)VCE(sat)=0.3VCE