isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transition frequency applications

文件：275.97 Kbytes 页数：2 Pages

ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High hFE ● Low VCE(sat)

文件：997.37 Kbytes 页数：3 Pages

JIANGSU

长电科技

NPN Silicon Epitaxial Transistor

Features ● Low VCE(sat). ● High hFE.

文件：43.58 Kbytes 页数：2 Pages

KEXIN

科信电子

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：56.9 Kbytes 页数：1 Pages

TEL

东电电子

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) = 0.3 VCE

文件：291.06 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V

文件：1.35878 Mbytes 页数：7 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

文件：1.35878 Mbytes 页数：7 Pages

RENESAS

瑞萨

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. • High hFE: hFE = 100 to 400\n• Low VCE(sat): VCE(sat) ≤ 0.25 V;

Renesas

瑞萨

晶体管

JSCJ

长晶科技