Epitaxial Planar PNP Silicon Transistor

@ Features 1) Large collector power dissipation: Po=30W (Te=25°C) 2) Wide ASO. 3) Complementary pair with 25D1761. 4) Easily insulated from the heat dis- sipation plate as the fin is molded.

文件：279.59 Kbytes 页数：3 Pages

ROHM

罗姆

TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR

Low Feq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Features 1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A 2) Excellent current characteristics of DC current gain. 3) Large collector power dissipation: PC=30W(TC=25℃) 4) Complementary pair with 2SB1187

文件：63.79 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SB1187 • Wide safe operating area APPLICATIONS • For low frequency power amplifier applications

文件：80.16 Kbytes 页数：3 Pages

ISC

无锡固电

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Low Collector Saturation Voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A • Excellent Current Characteristics of DC Current Gain. • Large Collector Power Dissipation: PC=30W(TC=25℃) • Complementary Pair with 2SB1187

文件：1.74428 Mbytes 页数：3 Pages

JIANGSU

长电科技

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SB1187 • Wide safe operating area APPLICATIONS • For low frequency power amplifier applications

文件：111.16 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications

文件：110.91 Kbytes 页数：3 Pages

SAVANTIC

丝印：2SD1762；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complements the 2SB1185

文件：1.3627 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications

文件：136.3 Kbytes 页数：3 Pages

ISC

无锡固电

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

文件：153.28 Kbytes 页数：4 Pages

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆