Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

文件：368.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •

文件：368.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Current Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied

文件：105 Kbytes 页数：5 Pages

SANYO

三洋

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 2A PCP

ONSEMI

安森美半导体