2SD1760TLQ

Epitaxial planar type NPN silicon transistor

PowerTransistor(50V,3A) Features 1)LowVCE(sat), VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe 2SB1184/2SB1243/2SB1185.
Structure EpitaxialplanartypeNPNsilicontransistor

2SD1760TLQ

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 3A CPT3

Rohm Semiconductor

2SD1760

TO-251-3LPlastic-EncapsulateTransistors

2SD1760

iscSiliconNPNPowerTransistor

2SD1760

MediumPowerTransistor

2SD1760

PowerTransistor(50V,3A)

2SD1760

NPNEpitaxialPlanarSiliconTransistor

2SD1760

PowerTransistor(50V,3A)

PowerTransistor(50V,3A) Features 1)LowVCE(sat), VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe 2SB1184/2SB1243/2SB1185.
Structure EpitaxialplanartypeNPNsilicontransistor

2SD1760

PowerTransistor50V,3A

PowerTransistor(50V,3A) Features 1)LowVCE(sat), VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe 2SB1184/2SB1243/2SB1185.
Structure EpitaxialplanartypeNPNsilicontransistor

2SD1760

SiliconNPNPowerTransistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=0.5V(Typ)@IC=2A ·GoodLinearityofhFE APPLICATIONS ·Powerdissipation