NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

文件：150.31 Kbytes 页数：2 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

文件：137.3 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

文件：137.3 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

文件：137.3 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

文件：137.3 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power transistor for low frequency applications

Polarity：NPN\nComplementary Product：2SB1016A\nRoHS Compatible Product(s) (#)：Available Collector Current IC 5 A \nCollector-emitter voltage VCEO 100 V ;

Toshiba

东芝

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 5A TO220NIS

Toshiba Semiconductor and Storage