Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage ,high reliability • High speed switching • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

文件：133.86 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage ,high reliability • High speed switching • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

文件：135.85 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE • Complement to Type 2SB1052 APPLICATIONS • Designed for power amplifier applications.

文件：253.13 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink w

文件：46.01 Kbytes 页数：2 Pages

PANASONIC

松下

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC

文件：258.589 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • On-chip C-to-B Zener diode for surge voltage absorption • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A • High DC Current Gain : hFE= 2000(Min) @IC= 1A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

文件：277.48 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC t

文件：109.6 Kbytes 页数：4 Pages

NEC

瑞萨

Medium Power Transistor

Features ● High current.(IC=5A). ● Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

文件：36.96 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：YR；Package：SOT-323；Medium Power Transistor (50V, 0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

文件：42.16 Kbytes 页数：3 Pages

ROHM

罗姆

Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

文件：1.38168 Mbytes 页数：8 Pages

ROHM

罗姆