Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

文件：1.38168 Mbytes 页数：8 Pages

ROHM

罗姆

Medium Power Transistor (50V,0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

文件：81.02 Kbytes 页数：3 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 APPLICATIONS ·Designed for high power amplifier applications.

文件：250.17 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type(For high power amplification)

Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 ■Features ● Extremely satisfactory linearity of the forward current transfer ratio hFE ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which can

文件：44.75 Kbytes 页数：2 Pages

PANASONIC

松下

Complementary pair with 2SB1055

Si NPN Triple Diffused Planar High Power Amplifier Complementary pair with 2SB1055 Features ● Exceptionally good linearity of hFE ● Wide area of safe operation (ASO) ● High fT ● Full Pack package for simplified mounting onlyu by a screw, requires no insulator.

文件：39.46 Kbytes 页数：1 Pages

PANASONIC

松下

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

文件：139.6 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

文件：147.28 Kbytes 页数：4 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB1056 APPLICATIONS ·Designed for high power amplifier applications.

文件：250.17 Kbytes 页数：2 Pages

ISC

无锡固电

SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

High Power Amplifier Complementary Pair with 2SB1056

文件：39.3 Kbytes 页数：1 Pages

PANASONIC

松下

SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

Si NPN Triple Diffused Planar High Power Amplifier Complementary Pair with 2SB1057 Features • Exceptionally good linearity of hFE. • Wide area of safe operation (ASO) • High fT • Full Pack package for simplified mounting only by a screw, requires no insulator.

文件：45.88 Kbytes 页数：1 Pages

PANASONIC

松下