丝印：D1468；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current

文件：1.43578 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D1468；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current

文件：1.43578 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

文件：32.15 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Planar, Darlington

Application High gain amplifier

文件：32.49 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Planar, Darlington

Application High gain amplifier

文件：155.3 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

文件：33.36 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

For power amplification with high forward current transfer ratio ■Features •High forward current transfer ratio hFEwhich has satisfactory linearity •High emitter-base voltage (Collector open) VEBO •Full-pack package which can be installed to the heat sink with one screw

文件：54.76 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE APPLICATIONS • Designed for power switching applications.

文件：258.56 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planer type darlington For low-frequency amplification ■ Features ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. ● A shunt resistor is omitted from the driver.

文件：53.16 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planer type darlington For low-frequency amplification ■ Features ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. ● A shunt resistor is omitted from the driver.

文件：53.16 Kbytes 页数：2 Pages

PANASONIC

松下