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2SD1436

isc Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1032 APPLICATIONS ·Designed for power switching applications.

文件:244.31 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1436K

Silicon NPN Triple Diffused

Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K)

文件:34.42 Kbytes 页数:6 Pages

HITACHIHitachi Semiconductor

日立日立公司

2SD1437

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER Complement to 2SB1033

文件:69.3 Kbytes 页数:1 Pages

WINGS

永盛电子

2SD1438

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: • High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) • Low Saturation Voltage : VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA)

文件:100.36 Kbytes 页数:2 Pages

TOSHIBA

东芝

2SD1438

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC=1A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件:252.97 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1439

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

文件:135.71 Kbytes 页数:3 Pages

SAVANTIC

2SD1439

isc Silicon NPN Power Transistor

DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers.

文件:57.74 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1439

SILICON NPN TRIPLE DIFFUSED JUNCTION MESA TYPE HORIZONTAL DEFLECTION OUTPUT

Horizontal Deflection Output Features Damper diode built-in High breakdown voltage and high reliability by glass passivation High speed switching Wide area if safety operation (ASO)

文件:100.85 Kbytes 页数:2 Pages

PANASONIC

松下

2SD1440

SILICON NPN TRIPLE DIFFUSED JUNCTION MESA TYPE HORIZONTAL DEFLECTION OUTPUT

Silicon NPN Triple-Diffused Junction Mesa Type Horizontal Deflection Output

文件:102.4 Kbytes 页数:2 Pages

PANASONIC

松下

2SD1440

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • Built-in Damper Diode APPLICATIONS • Designed for horizontal deflection output applications.

文件:242.28 Kbytes 页数:2 Pages

ISC

无锡固电

晶体管资料

  • 型号:

    2SD1436K

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    120V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BDV65C,BDV67B,BDW83D,2SD1210,

  • 最大耗散功率:

    80W

  • 放大倍数:

    β>1000

  • 图片代号:

    B-70

  • vtest:

    120

  • htest:

    999900

  • atest:

    10

  • wtest:

    80

供应商型号品牌批号封装库存备注价格
RENESAS
26+
TO3P
360000
进口原装现货
询价
HIT
24+
600
询价
ROHM/罗姆
22+
TO-3P
6000
十年配单,只做原装
询价
RENESAS
06+
TO3P
400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
RENESASHI
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
TOS
23+
TO
20000
正品原装货价格低
询价
RENESASHITACHI
25+
NA
880000
明嘉莱只做原装正品现货
询价
RENESAS
2023+
TO3P
8800
正品渠道现货 终端可提供BOM表配单。
询价
RENESAS
23+
TO3P
500
全新原装正品现货,支持订货
询价
ROHM
25+
TO-3P
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多2SD14供应商 更新时间2026-2-4 18:30:00