NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 100V(Min) APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.

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ISC

无锡固电

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SB0987 (2SB987) ■Features ● High collector to emitter voltage VCEO. ● Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

文件：37.87 Kbytes 页数：2 Pages

PANASONIC

松下

30V/12A High-Speed Switching Applications

30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching

文件：105.21 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ·High-speed switching app

文件：206.73 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ·High-speed switching app

文件：160.67 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

文件：148.57 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

文件：141.25 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

文件：92.91 Kbytes 页数：3 Pages

JMNIC

锦美电子

30V/20A High-Speed Switching Applications

30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Large current switching of relay drivers, high-speed inverters, converters.

文件：100.02 Kbytes 页数：3 Pages

SANYO

三洋