2SD1140

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=4000(min)(VCE=2V,IC=150mA) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

2SD1141

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) •HighDCCurrentGain:hFE=500(Min)@IC=4A APPLICATIONS •Designedforhighvoltageswitching,igniterapplications.

2SD1145

High-Current Driver Applications?????????????

Features ·Lowsaturationvoltage. ·LargecurrentcapacityandwideASO. Applications ·Relaydrivers,hammerdrivers,lampdrivers,strobeDC-DCconverters,motordrivers.

2SD1148

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIOPOWERAMPLIFIER DCTODCCONVERTER ●HighCurrentCapability ●HighPowerDissipation ●Complementaryto2SB863

2SD1148

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SB863 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudio frequencyamplifieroutputstage

2SD1148

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SB863 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudio frequencyamplifieroutputstage

2SD1149

Silicon NPN epitaxial planer type(For low-frequency amplification)

SiliconNPNepitaxialplanartype Forlow-frequencyamplification ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •Highemitter-basevoltage(Collectoropen)VEBO •Minitypepackage,allowingdownsizingoftheequipmentandautomatic

2SD1149

NPN EPITAXIAL PLANAR

2SD1149-1Page 2SD1151-3Page 2SD1154-5Page

2SD1140

Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

2SD1140

Micro Motor Drive, Hammer Drive Applications