| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MEDIUM POWER TRANSISTOR Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F. 文件：42.27 Kbytes 页数：1 Pages | ROHM 罗姆 | ROHM | ||
MEDIUM POWER TRANSISTOR Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F. 文件：42.27 Kbytes 页数：1 Pages | ROHM 罗姆 | ROHM | ||
MEDIUM POWER TRANSISTOR(-80V, -0.7A) [ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F. 文件：38.76 Kbytes 页数：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot 文件：389.87 Kbytes 页数：10 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot 文件：389.87 Kbytes 页数：10 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Silicon NPN epitaxial planer type darlington(For low-frequency amplification) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type 文件：51.33 Kbytes 页数：2 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN epitaxial planer type darlington(For low-frequency amplification) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type 文件：51.33 Kbytes 页数：2 Pages | PANASONIC 松下 | PANASONIC | ||
Large-Current Switching Applications Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring. 文件：99.14 Kbytes 页数：4 Pages | SANYO 三洋 | SANYO | ||
Large-Current Switching Applications Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring. 文件：57.4 Kbytes 页数：5 Pages | SANYO 三洋 | SANYO | ||
Large-Current Switching Applications Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring 文件：97.06 Kbytes 页数：5 Pages | ONSEMI 安森美半导体 | ONSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
通用型 （Uni）_LO.SAT
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
2A
- 最大工作频率：
150MHZ
- 引脚数：
3
- 可代换的型号：
2SC3328,2SC4145,2SD2069,2SD2485,
- 最大耗散功率：
1W
- 放大倍数：
- 图片代号：
A-70
- vtest：
60
- htest：
150000000
- atest：
2
- wtest：
1
技术参数
- Configuration：
Single
- Maximum Collector Base Voltage：
60V
- Maximum Collector Emitter Saturation Voltage：
0.4@50mA@1AV
- Maximum Collector Emitter Voltage：
50V
- Maximum DC Collector Current：
2A
- Maximum Emitter Base Voltage：
6V
- Maximum Operating Temperature：
150°C
- Maximum Power Dissipation：
1000mW
- Maximum Transition Frequency：
150(Typ)MHz
- Type：
NPN
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
TO-92 |
66500 |
郑重承诺只做原装进口现货 |
询价 | ||
RENESAS |
24+ |
60000 |
询价 | ||||
SAN |
24+ |
原厂封装 |
3500 |
原装现货假一罚十 |
询价 | ||
UTG |
24+ |
SOT-89 |
5000 |
只做原装公司现货 |
询价 | ||
BLUE ROCKET(蓝箭) |
2447 |
TO-92LM |
105000 |
2500个/盒一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
SANYO |
23+ |
TO-92L |
4000 |
正品原装货价格低 |
询价 | ||
N/A |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
24+ |
N/A |
54000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
询价 | ||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 |
相关规格书
更多- AIP5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- 4TPE330MW
相关库存
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- 4TPE330M
