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2SC607

PNP/NPN SILICON EPITAXIAL TRANSISTOR

AudioFrequencyAmplifier

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

2SC6071

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-CurrentSwitchingApplications Applications •Relaydrivers,lampdrivers,motordrivers. Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

SANYO

2SC6072

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6075

Silicon NPN Epitaxial Type

PowerAmplifierApplications PowerSwitchingApplications Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6075

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6076

Silicon NPN Epitaxial Type (PCT Process)

PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6076

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6077

Silicon NPN Epitaxial Type (PCT Process)

○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6077

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6078

Silicon NPN Epitaxial Type (PCT Process)

○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6078

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6079

Silicon NPN Epitaxial Type

PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6079

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC6076(TE16L1,NV)

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 3A PW-MOLD

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

晶体管资料

  • 型号:

    2SC607

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    射频/高频放大 (HF)_TR_输出极 (E)

  • 封装形式:

    直插封装

  • 极限工作电压:

    75V

  • 最大电流允许值:

    0.6A

  • 最大工作频率:

    70MHZ

  • 引脚数:

    3

  • 可代换的型号:

    BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2SC959,3DA103B,

  • 最大耗散功率:

    1W

  • 放大倍数:

  • 图片代号:

    C-40

  • vtest:

    75

  • htest:

    70000000

  • atest:

    .6

  • wtest:

    1

详细参数

  • 型号:

    2SC607

  • 功能描述:

    PNP/NPN SILICON EPITAXIAL TRANSISTOR

供应商型号品牌批号封装库存备注价格
23+
TO
20000
正品原装货价格低qq:2987726803
询价
TOS
2017+
SOT252
24589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
TOSHIBA
2016+
TO252
3830
只做原装,假一罚十,公司可开17%增值税发票!
询价
SANYO
360000
原厂原装
1305
询价
TOSHIBA
2020+
TO252
1998
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TOSHIBA
TO252
37526
只做原装货值得信赖
询价
TOS
1203+
TO-220
150
原装现货海量库存欢迎咨询
询价
TOS
22+23+
TO-220
8992
绝对原装正品全新进口深圳现货
询价
TOSHIBA
1822+
TO-252
6852
只做原装正品假一赔十为客户做到零风险!!
询价
SANYO
21+
TO-3PF
12588
原装正品,自己库存 假一罚十
询价
更多2SC607供应商 更新时间2024-4-27 10:30:00